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Supporting information to derive the figures of the paper: 'Ge wafers for strained quantum wells with low disorder'

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4TU.ResearchData2023-05-22 更新2026-04-23 收录
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https://data.4tu.nl/datasets/52a5bcf9-8e15-4871-b256-10f90e320ecc/1
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资源简介:
The data sets are provided to recover each panel of the figures presented in the manuscript 'Ge wafers for strained quantum wells with low disorder'. The data supports observed improvements in both crystal quality as well as transport properties of the Ge quantum well when using Ge wafers as a substrate. The data sets are the raw datasets taken from measurements. Python files are added that we used to analyse and plot the data.

本数据集旨在复现学术论文《低无序应变量子阱用锗晶圆》中的全部图表子图。本数据集佐证了以锗晶圆作为生长衬底时,锗量子阱的晶体质量与输运性能均存在观测到的提升。本次提供的数据集均为实验测量所得的原始数据,同时附带了我们用于数据分析与绘图的Python脚本文件。
提供机构:
Stehouwer, Lucas
创建时间:
2023-05-22
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