Supplementary1
收藏DataCite Commons2025-03-19 更新2025-03-22 收录
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https://aip.figshare.com/articles/dataset/Supplementary1/28465736/1
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资源简介：
Supplementary information about the study. (A) Diffusion and surface segregation models in InGaN (B) Diffusion and surface segregation models in GaN (C) IQE dependence on the defect concentration (D) Sample design for the GI sample series (E) Secondary ion mass spectrometry analysis (F) Surface morphology study of the ammonia flow series
提供机构：
AIP Publishing
创建时间：
2025-03-19
