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Anisotropy of the ultrafast Mott insulator-to-metal transition in the quantum material V2O3: towards a global physical picture

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ESRF Portal2028-01-01 更新2026-04-23 收录
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https://doi.esrf.fr/10.15151/ESRF-ES-2024052307
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Building on our discovery that ultrafast photoinduced Mott insulator-to-metal transitions (IMT) in V2O3 are driven by strain waves [T. Amano et al., Nature Physics (2024), accepted], this proposal aims to explore how crystal orientation and size influence these transitions using Focused Ion Beam technology. We will employ ultrafast light pulses and X-ray diffraction to analyse the effects of anisotropic properties on IMT efficiency. Results will deepen our understanding of IMT mechanisms, enhance theoretical models, and contribute to the development of new quantum material applications, such as ultrafast switches and sensors.
提供机构:
UMR CNRS UR1 6251 - Universite Rennes 1, Institut de Physique de Rennes - IPR, Campus de Beaulieu, 35042 Rennes Cedex, France; UMR CNRS UR1 6251 - Universite Rennes 1, Institut de Physique de Rennes - IPR, Campus de Beaulieu, 35042 , Rennes, FR; I M N, 2 rue de la Houssinière, 44072 NANTES Cedex, France; CNRS UMR 6502 - Universite de Nantes, Laboratoire de Chimie des Solides, Institut des Matériaux Jean Rouxel 2 rue de la Houssinière BP 32229, 44322, Nantes, FR; ESRF, 71 avenue des Martyrs, CS 40220, 38043 Grenoble Cedex 9, France; Institut des Materiaux de Nantes, 2 rue de la Houssiniere, 44072 NANTES Cedex 03, France; Institut des materiaux Jean Rouxel Nantes, 2 rue de la Houssiniere, BP32229, 44322 NANTES, France
创建时间:
2028-01-01
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