Research data supporting "Order in disorder: Increased carrier mobility of downscaled amorphous semiconductors as exemplified by hydrogenated amorphous silicon"

This dataset contains a data folder, a code folder and an underpinning work statement to support the reproduction of the corresponding paper. The data were generated during the investigation of the band structure and carrier mobility of macroscale and downscaled amorphous semiconductors exemplified by hydrogenated amorphous silicon. They were collected both numerically and analytically through finite-element modeling, statistical analyses and charge transport calculation. As the corresponding paper is a sequel to two preceding works, it is recommended that readers should read through the content in the preceding papers and their supporting datasets before understanding the data and codes here in this dataset. These two preceding works are: Paper 1: Y. Luo and A. Flewitt, Phys. Rev. B, 109, 104203 (2024) Paper 2: Y. Luo and A. Flewitt, J. Non-Cryst. Solids, 654, 123436 (2025) General and detailed 'README.txt' files are provided in this dataset. Read them before using the data or codes.