Dielectronic Recombination of Xe^10+ Ions and Satellite line of Xe^9+ Ions

EUV light sources from compact plasmas are now intensively studied for the next gen-eration of lithography. The multicharged Xe ions emit EUV emission and are now in-vestigated extensively. However we do not know the detailed atomic processes for theXe ions. We study in this paper on dielectronic and radiative recombination processesof Xe ions. We have calculated the energy levels, radiative transition probabilities (Ar),autoionization rates (Aa), and radiative recombination cross section for Xe^10+ ions us-ing the FAC code. The dielectronic recombination rate coefficient(alpha_DR) from the Xe^10+ions and the related dielectronic satellite lines are obtained. We studied the n- and l-dependence for Ar; Aa, dielectronic recombination rate coefficient(alpha_DR) and radiativerecombination rate coefficient(K_rr). The dielectronic recombination processes from the4d^8 + e rightarrow 4d^74f^1nl rightarrow 4d^8nl + hv and the 4d^8 + e rightarrow 4d^75p^1nl rightarrow 4d^8nl + hv becomeimportant at low plasma temperature Te approx 10eV for line intensities. Also, the radiativerecombination rate coefficient is smaller than the values of the dielectronic recombinationprocesses in our interested temperature region at Te = 1eV - 1000eV.

紧凑等离子体产生的极紫外光源目前正受到下一代光刻技术的广泛关注。多电荷的氙离子发射极紫外辐射，目前正被广泛研究。然而，我们尚不清楚氙离子的详细原子过程。在本研究中，我们探讨了氙离子的电离和辐射复合过程。我们利用FAC代码计算了氙^{10+}离子的能级、辐射跃迁概率（Ar）、自电离率（Aa）以及辐射复合截面。从氙^{10+}离子和相关的电离卫星线获得了电离复合速率系数(α_DR)。我们研究了Ar；Aa、电离复合速率系数(α_DR)和辐射复合速率系数(K_rr)的n和l依赖性。在低等离子体温度Te约为10eV时，从4d^8 + e → 4d^74f^1nl → 4d^8nl + hv以及4d^8 + e → 4d^75p^1nl → 4d^8nl + hv的电离复合过程变得重要。此外，在Te = 1eV至1000eV的感兴趣温度区域内，辐射复合速率系数小于电离复合过程的值。