Pressure induced ground states in bulk CrSBr

We propose to perform high pressure (HP) – Room temperature (RT) and low temperature (LT) single crystal diffraction studies on CrSBr, a layered A-type antiferromagnetic semiconductor (TN~130K) [i]. We want to determine the pressure evolution of the crystal structure and of the lattice parameters at both RT and LT. We will then use these results to calculate the properties of bulk CrSBr with ab-initio calculations and to corroborate these new findings with our Raman scattering data showing signatures of a phase transition and the appearance of a metallic behaviour. This is extremely important to understand the properties of CrSBr under pressure as this A-type AFM is a direct band gap semiconductor which emission properties are correlated to the magnetic ground state and is foreseen to be used as a pressure/strain quantum sensor.