Structural investigations of the Al2O3 ultra thin films
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Ultra-thin layers of Al2O3 were deposited by atomic layer deposition (ALD) (Beneq TFS 200 ALD system). This method provides precise thickness control down to a single atomic layer. The precursors used were trimethylaluminum (Sigma-Aldrich) and purified water. The deposition of the atomic layer was carried out at 200 °C. Samples with a thickness of 2 and 8 nm of alumina, deposited on silicon (111) substrates, were selected for the tests. A Philips X'Pert diffractometer system with Cu filtered Kα radiation in the range 10° – 80° of 2θ was used for XRD measurements. No crystalline phase was bserved in prepared samples.
提供机构：
Marcin Stanisław Łapiński
