Data Supporting "Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance", AIP Advances 5, 127108 (2015)

(Abstract from article) We have studied in-plane anisotropic magnetoresistance(AMR) in cobaltfilms with overlayers having designed electrically interface transparency. With an electrically opaque cobalt/overlayer interface, the AMR ratio is shown to vary in inverse proportion to the cobaltfilm thickness; an indication that in-plane AMR is a consequence of anisotropic scattering with both volume and interfacial contributions. The interface scattering anisotropy opposes the volume scattering contribution, causing the AMR ratio to diminish as the cobaltfilm thickness is reduced. An intrinsic interface effect explains the significantly reduced AMR ratio in ultra-thin films.