Supplementary1
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资源简介：
Supplementary information about the study. (A) Diffusion and surface segregation models in InGaN (B) Diffusion and surface segregation models in GaN (C) IQE dependence on the defect concentration (D) Sample design for the GI sample series (E) Secondary ion mass spectrometry analysis (F) Surface morphology study of the ammonia flow series
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AIP Publishing创建时间：
2025-02-23
