Microelectronic Components Charge Density vs. Temperature in Real Time

The objective of this proposal is to investigate the temperature dependence of charge density in microelectronic components under the action of pulsed X-ray as an alternative source that induces SEE. The main focus is on understanding how temperature affects charge density, since thermal generation of charge carriers increases with increasing temperature, which leads to an increase in the number of free carriers (electrons and holes) due to excitation from the valence band to the conduction band. Therefore, the number of SEE should increase with increasing temperature and lead to failure of the component.