MBE growth and characterization data of Epitaxial CrSb (0001) thin films

This data package contains the samples used in the paper (https://arxiv.org/pdf/2505.00239).

The study was focused on developing the MBE growth of epitaxial, NiAs-type CrSb (0001). Structural characterizations including XRD, AFM and a thorough understanding of band structure of the material using ARPES was executed. We have successfully obtained good quality epitaxial thin films of CrSb (0001) of surface rms roughness ~ 1 nm at a substrate growth T of 240 °C and a Cr/Sb flux ratio of 1:5.8. The electronic band structure exhibits an expected symmetry of a g-wave altermagnet.