Total Ionizing Dose Response of a 22-nm Compiled Fully-Depleted-Silicon-on-Insulator Static Random Access Memory

This summary describes the results of total ionizing dose (TID) experiments on fully depleted silicon on insulator (FDSOI) static random access memory (SRAM). The tests were conducted with C060 gamma irradiation with most electrical testing occurring within the Gammacell. Tests were conducted at multiple voltages and with and without read and write assists. We show excellent cell stability past 1 Mrad(Si) TID via the margin mode tests. We also report input-output (IO) level translation circuit failure above 1 Mrad(Si) as well as anomalous circuit failures at relatively low TID dose. While these failures are still under investigation, we believe these failures are not germane to the SRAM circuits. This summary also reports on circuit and cell stability recovery, post-irradiation Index Terms—FDSOI, TID, SRAM.