Single Event Effects Testing for Integrated GaN Power Devices

GaN FETs can provide higher switching rates which can lead to smaller, lighter, faster and more responsive circuits; however, historically, GaN FETs have been considered too difficult to drive and many GaN parts have shown lower reliability compared to Si FETs. This has resulted in a limited number of GaN devices thoroughly tested for use in space environments. These drawbacks have meant that, when designing for space applications, most engineers have relied on MOSFETs. Two recent innovations have caused GaN FETs to be more attractive to designers: 1) process improvements that have increased reliability and 2) driver and FET integration that has reduced design complexities. With the reliability and design complexity concerns addressed, it has become pertinent to give GaN technology a closer look. To find out if a shift towards GaN technology is feasible for space applications, Single Event Effects Testing can give insight into how these devices will perform in higher radiation environments. To this end, four CoTS parts were taken to the 88-Inch Cyclotron at Lawrence Berkely National Laboratory in July 2023 and tested for their susceptibility to single event gate rupture, latch-up and burnout. The data from testing is presented and analysis of data is given. Recommendations for further testing of similar integrated devices are provided.