Demonstration of polycrystalline thin film coatings on glass for spin Seebeck energy harvesting - dataset

Zip file with all raw XRD, XRR, transport data.Origin project(s) containing raw and processed data for related publication.Figure 1 was schematic only and not included here.Figure 2 and Figure S2 are in the same origin project (simple and extended TEM data).Figure captions:Figure 2 TEM analysis of SSE5a. a) & b) STEM/BF and HAADF images of the thin film, respectively. c) Conventional HREM of the PM Pt layer. d) EDX line-scan performed perpendicular to the interfaces of the layers.Figure 3 Summary of the magnetic, electric and thermal properties. a) Spin Seebeck voltage, VISHE (symbols), as a function of applied magnetic field plotted alongside magnetic data (line). b) Resistivity of the devices as a function of tPM. c) Normalised spin Seebeck voltage, SSSE, as a function of tPM, plotted alongside simulated SSSE (θSH = 0.1, λSD = 2 nm, Ms = 90 Am2/kg, D = 71x1041 Jm2[19], gr = 1,3 & 5x1018 m-2[20]). d) Definition of the parameters used to describe heat flow, (e) & (f) Change in ΔT2, and SSSE with substrate's thermal conductivity, κ3.Figure S1 Characterisation of the Fe3O4 film. a) SQUID magnetometry above and below the Verwey transition, TV. b) Resistivity as a function of temperature. c) XRD of a set of 4 separately prepared Fe3O4 films. The inset shows a close-up of the (311), (222) peaks. d) Example XRR data (symbols) and fit (solid line), indicating thickness = 79 nm, roughness = 1.5 nm.Figure S2 TEM analysis of SSE5a. a) & b) STEM/BF and HAADF images of the thin film, respectively. c) Conventional HREM of the PM Pt layer. d) & e) STEM/BF image of the thin film stack and corresponding EDX line-scan performed perpendicular to the interfaces of the layers, respectively, and f) schematic of the grain growth described in the text.Figure S3 Characteristics of the bilayer film. a) XRD of SSE5a (2.5 nm Pt) and SSE20a (7.3 nm Pt). Inset shows a close-up of the Pt peak. b)  XRR fit of SSE5a; Pt thickness = 2.5 nm, roughness = 2 nm.Figure S4 Example spin Seebeck measurement for SSE7a (tPM = 3.2 nm) measured in fixed field as a function of temperature difference. Note that the sign convention for measurements, defined in Fig 1(a) of the main manuscript follows from Uchida et al.[6].

压缩文件包含所有原始的 XRD、XRR 和传输数据。原始项目（包含原始和已处理数据，用于相关出版物）来源。图 1 仅提供示意图，此处未包含。图 2 和图 S2 来自同一原始项目（简单和扩展的 TEM 数据）。图题：图 2 SSE5a 的 TEM 分析。a) 和 b) 分别为薄膜的 STEM/BF 和 HAADF 图像。c) PM Pt 层的常规 HREM。d) 垂直于层界面的 EDX 线扫描。图 3 磁性、电性和热性能的总结。a) 顺磁塞贝克电压，VISHE（符号），作为施加磁场的函数绘制，并与磁性数据（线）并排展示。b) 设备的电阻率作为 tPM 的函数。c) 标准化顺磁塞贝克电压，SSSE，作为 tPM 的函数绘制，并与模拟的 SSSE（θSH = 0.1，λSD = 2 nm，Ms = 90 Am2/kg，D = 71x1041 Jm2[19]，gr = 1,3 & 5x1018 m-2[20]）并排展示。d) 描述热流所使用的参数定义。e) 和 f) 随衬底热导率 κ3 的变化，ΔT2 和 SSSE 的变化。图 S1 Fe3O4 薄膜的表征。a) Verwey 转变 TV 上下的 SQUID 磁测量。b) 电阻率随温度的变化。c) 4 个单独制备的 Fe3O4 薄膜的 XRD。插图显示了 (311)、(222) 峰的近距离视图。d) 示例 XRR 数据（符号）和拟合（实线），表明厚度 = 79 nm，粗糙度 = 1.5 nm。图 S2 SSE5a 的 TEM 分析。a) 和 b) 分别为薄膜的 STEM/BF 和 HAADF 图像。c) PM Pt 层的常规 HREM。d) 和 e) 薄膜堆叠的 STEM/BF 图像以及垂直于层界面进行的相应 EDX 线扫描，f) 文中描述的晶粒生长示意图。图 S3 双层薄膜的特性。a) SSE5a（2.5 nm Pt）和 SSE20a（7.3 nm Pt）的 XRD。插图显示了 Pt 峰的近距离视图。b) SSE5a 的 XRR 拟合；Pt 厚度 = 2.5 nm，粗糙度 = 2 nm。图 S4 SSE7a（tPM = 3.2 nm）的顺磁塞贝克测量示例，在固定磁场中作为温度差的函数。请注意，测量的符号约定遵循主文图 1(a) 中定义的 Uchida 等人[6]的方法。