data for "Transient Photoexcited State of a Small-Gap Quasi-Two-Dimensional Mott-Hubbard Insulator"

photoemission data vs kin. energy (from 12 eV, step 0.05 eV, 136 points) and angle (from -5.39156°, step 0.0739°, 160 points), file Si111_085 (136 x 160 matrix), and same energy and step, 131 points, and angle from -5.83, step 0.074° (160 points), file Si111_050m, for Fig. 1 c. photoemission spectra without pump (Si111_085_prof1_smth), -1 ps (s12), 0.1 ps (s3), 1 ps (s5) and 1000 ps (s9) with respect to the pump as a function of kinetic energy (en) (Fig. 2a) shift on p-doped substrate (shift-p-99) vs delay (ritard99), shift on n-doped substrate (shift79n and shiften) vs delay (rit79 and rit), shift of LHB (shiftLBH) vs delay (rit) , broadening of the state at M (semilargM) vs delay (ritardo). For Fig. 2 b-d. estimated temperatures (temperatura) as a function of pump-probe delay (ritardom). STS at 300 K (STS300), at 8 K (STS8), room temperature photoemission spectrum (fotoem) and DOS as a function of energy (enph) Fig 3 a,b, photoemission spectra at -1 ps (spm1), -0.07 ps (spm07), 0 ps (sp0), 0.13 ps (spp13), 0.3 (spp3), 0.5 (spp5) and 0.8 ps (spp8) as a function of energy (energ53-58).