Electrical and noise responses of graphene/AlGaN/GaN field-effect transistor for nitrogen dioxide, teatrahydrofuran, and acetone sensing
收藏DataCite Commons2024-03-01 更新2025-04-16 收录
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https://mostwiedzy.pl/en/open-research-data/electrical-and-noise-responses-of-graphene-algan-gan-field-effect-transistor-for-nitrogen-dioxide-teatrahydrofuran-and-acetone-sensing,229102621221227-0
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资源简介：
This data set consists of raw and modified data concerning current-voltage characteristics and low-frequency noise spectra measured for graphene/AlGaN/GaN field-effect transistor in the ambiance of selected gases (laboratory air, dry and wet synthetic air, nitrogen dioxide, tetrahydrofuran, and acetone). The data show that sensor responses are enhanced when utilizing UV irradiation (275 nm) compared to dark conditions.
提供机构：
Gdańsk University of Technology
创建时间：
2024-02-29
