Is Graphitic Silicon Carbide (Silagraphene) Stable?

Graphene is considered
to be the most likely candidate for the
postsilicon era; however, the problem with its zero band gap is challenging
to overcome. A close relative of silicon, silicon carbide is expected
to have a stable 2D polymorph which happens to be a wide-gap semiconductor.
Unfortunately, the so-called silagraphene has proven to be elusive.
To date, neither theoretical nor experimental studies have been conclusive.
Here, we employ computational methods to determine the stable arrangements
of silagraphene and establish their accurate band structure. We also
experimentally validate our models by preparing and characterizing
a number of graphitic features. Silagraphene exhibits a wide spectrum
of optoelectronic properties (360–690 nm) as well as an unusual
band structure with highly anisotropic transport properties, which
originates from its nondispersive band near its K-point. This feature
makes direct-indirect gap crossover extremely sensitive to ambient
conditions, making silagraphene suitable for a range of sensors.