Graphene oxide thin films deposited on a PCB board - chemical analysis

Graphene oxides based films were measured by  X-ray photoemission spectroscopy (XPS) method. TheXPS measurements were carried out with the Omicron NanoTechnology UHV equipment. The hemispherical spectrophotometer was equipped with a 128-channel collector. The XPS measurements were performed at room temperature at a pressure below 1.1 × 10−8 mBar. The photoelectrons were excited by an Mg-Kα X-Ray source. The X-ray source was operated at 15 kV and a power of 300 W. Obtained results were analyzed by CasaXPS software. For measurements thin films deosited on a PCB board of the pure graphene oxide (GO), reduced graphene oxide (rGO) and functionalized by S and N elements graphene oxide were selected. Nitrogen doped graphene oxide was synthesized by the hydrthermal method. O1s, C1s, N1s and S2phigh resolution spectra were recorded.