Research data supporting "Coercive field control in epitaxial ferroelectric Hf0.5Zr0.5O2 thin films by nanostructure engineering"

Structural analysis using x-ray diffraction, tunneling electron microscopy to identify the ferroelectric phase responsible for polarization, x-ray photoelectron spectroscopy to analyse potential relative stoichiometric change between two samples grown at different growth condition, electrical characterization using ferroelectricity tester (Aixacct TF2000 analyzer) for P-E loops and I-E loops, piezo-response force microscopy for phase and amplitude contrast for both out-of-plane and in-plane polarization vectors and theoretical calculations using DFT calculations for energy barrier for ferroelectric switching in two different orientation presented in this work.