Electrically modulated light-emitting device driven by resonant and antiresonant tunneling between Cr2Ge2Te6 electrodes

We fabricated a van der Waals device with a Cr₂Ge₂Te₆/hBN/WSe₂/hBN/Cr₂Ge₂Te₆ architecture, encapsulated with hBN films on a Si/SiO₂ wafer. The available data include measurements of this structure using electroluminescence (EL) and photoluminescence (PL) techniques. The sample was investigated at room temperature. We also provide density of states and band structure calculations for Cr₂Ge₂Te₆ obtained using the DFT method.