Germanium ion implantation into gallium nitride

Data regarding ion implantation of germanium into gallium nitride thin films for realization of n-type doping. Collection includes implantation parameters, X-ray diffraction results, low-temperature photoluminescence, secondary ion mass spectrometry and electrical parameters measured by Hall efffect method. The dataset also includes energy barriers for Ge atom migration in GaN calculated using Density Functional Theory, along with the corresponding theoretically estimated diffusion coefficients. For detailed description please consult the readme.txt file.