Structure evolution of V2O5 thin films deposited on silicon substrate - High-Temperature X-ray Diffraction
收藏Mendeley Data2024-01-31 更新2024-06-29 收录
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The DataSet contains the XRD patterns of V2O5 thin films deposited on silicon substrates (111). The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on the silicon substrate. The structure was measured in-situ during heating between 50-800°C under synthetic air. X-ray diffraction patterns (XRD) were collected on a Philips X’PERT PLUS diffractometer with Cu Ka radiation (1.5406 Å) and ranging from 10 to 80 degrees.
创建时间：
2024-01-31
