高击穿电压与导通电流的金刚石功能器件性能表征与仿真数据集
收藏国家基础学科公共科学数据中心2025-11-15 收录
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https://nbsdc.cn/general/dataDetail?id=69135d94195d264cf539a4fa&type=1
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资源简介:
该数据集主要面向金刚石功能器件领域的研究,旨在为金刚石等宽禁带半导体功率器件研究提供数据支持,为器件性能优化设计提供参考。本数据集内容包含金刚石功率肖特基二极管器件、金刚石功率场效应晶体管器件的各项重要电学性能指标以及金刚石器件耐压特性仿真数据,包括肖特基二极管器件导通电流密度、肖特基二极管器件反向击穿电压、掺硼金刚石比接触电阻、场效应晶体管器件导通电流密度、场效应晶体管器件反向击穿电压及氢终端表面比接触电阻的测试数据、耐压金刚石器件结构电场分布仿真设计数据,检验报告、论文和专利。数据集总量约为56MB。
This dataset is primarily oriented towards research in the field of diamond functional devices, aiming to provide data support for studies on wide-bandgap semiconductor power devices such as diamond, and offer references for the optimal design of device performance. The dataset contains various key electrical performance metrics of diamond power Schottky diodes and diamond power field-effect transistors (FETs), as well as simulation data on the voltage-withstanding characteristics of diamond devices. Specific included content covers: test data of the on-current density of Schottky diodes, reverse breakdown voltage of Schottky diodes, specific contact resistance of boron-doped diamond, on-current density of FETs, reverse breakdown voltage of FETs, and specific contact resistance of hydrogen-terminated surfaces; simulation design data of electric field distribution for voltage-withstanding diamond device structures; as well as test reports, academic papers and patents. The total size of this dataset is approximately 56 MB.
提供机构:
哈尔滨工业大学
搜集汇总
数据集介绍

背景与挑战
背景概述
该数据集聚焦金刚石功能器件的性能表征与仿真,专门针对高击穿电压和导通电流特性,包含肖特基二极管、场效应晶体管等关键电学性能测试数据以及耐压结构仿真设计数据,旨在为宽禁带半导体功率器件的优化设计提供参考。数据集总量约56MB,涵盖62个文件,格式包括csv、pdf、txt等,支持金刚石功率器件领域的研究与开发。
以上内容由遇见数据集搜集并总结生成



