CIGS Experimental and SCAPS Data
收藏IEEE2026-04-17 收录
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资源简介:
This dataset contains simulated and experimental data for CIGS devices with and without RbF post-deposition treatment. The experimental results include full dark and light current-voltage curves from 150K to 350K. It also includes diode parameters calculated from these curves at 300K. The simulated results include SCAPS simulated Voc values over a range of defect concentrations for the Ev+0.58eV, Ev+0.98eV, and bandtail defects.
提供机构:
Wands, Jake



