Raw data for "High speed all-silicon carrier accumulation modulator based on a lateral MOS-capacitor"

This dataset contains the raw data used for the figures in the paper Kapil Debnath, David J. Thomson, Weiwei Zhang, Ali Z Khokhar, Callum Littlejohns, James Byers, Lorenzo Mastronardi, Muhammad K. Husain, Fredric Y. Gardes, Graham T. Reed, and Shinichi Saito "High speed all-silicon carrier accumulation modulator based on a lateral MOS-capacitor"Abstract: In silicon photonics, primarily carrier depletion scheme has been used for demonstrating high speed electro-optic modulation. However, in terms of phase modulation efficiency, carrier accumulation process offers almost an order of magnitude improvement over carrier depletion process. Due to fabrication restriction, previously reported accumulation modulator designs only considered vertical metal-oxide-semiconductor (MOS)-capacitors, which imposes serious restrictions on the design flexibility and integratability with other photonic components. In this work, we design and experimentally demonstrate an all-silicon accumulation phase modulator based on a lateral MOS-capacitor. Using a Mach-Zehnder interferometer (MZI) modulator with a 500-µm-long phase-shifter, we demonstrate high speed modulation up to 25 Gbit-s-1 with a modulation efficiency (VπLπ) of 1.53 V-cm.