Dataset for "Overcoming Asymmetric Carrier Injection in III-Nitride Light-Emitting Diodes through Defect Engineering"
收藏Figshare2025-06-21 更新2026-04-08 收录
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https://figshare.com/articles/dataset/Dataset_for_Overcoming_Asymmetric_Carrier_Injection_in_III-Nitride_Light-Emitting_Diodes_through_Defect_Engineering_/29375081/1
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资源简介：
This dataset contains the input and output files used in the calculations of carrier relaxation dynamics in GaN/AlN quantum wells, as presented in the paper "Overcoming Asymmetric Carrier Injection in III-Nitride Light-Emitting Diodes through Defect Engineering". It includes raw simulation inputs.
提供机构：
Sun, XiaoJuan; Jiang, Ke; Li, Dabing; Ma, Xiaobao; Yang, Yuxin; Zhang, Feng; Han, Peng; Shi, Zhiming; Yu, Yan; Zang, Hang; Yan, Xiaolan; Wei, Su-Huai; Lv, Shunpeng
创建时间：
2025-06-21
