Raw data for publication titled " GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface"
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Raw data (Time-resolved photoluminescence and Secondary Ion Mass Spectrometry) used for the publication: https://doi.org/10.1063/5.0040326 Layer sequence of each sample could be found in the excel sheet named SampleLibrary
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Chen创建时间：
2023-08-18
