Processed Photoluminescence Spectrum of an Electrochemically Modified InP Surface for Compliant Buffer Applications

This dataset contains a single representative, processed photoluminescence (PL) spectrum of an electrochemically modified indium phosphide (InP) surface engineered to function as a mechanically compliant buffer layer for advanced electronic and optoelectronic heterostructures. The processed PL spectrum is provided as supporting optical evidence demonstrating the preservation of electronic and radiative quality of InP following controlled electrochemical surface modification that results in a microtextured, domain-segmented surface morphology. The spectrum exhibits a pronounced near-band-edge emission characteristic of single-crystalline InP and does not show additional low-energy defect-related luminescence bands. Only the processed photoluminescence spectrum is included in this dataset. Raw PL data and full experimental or electrochemical processing parameters are intentionally not disclosed at this stage, as the dataset is intended to document the final optical outcome relevant to the interpretation presented in the associated research study. The dataset may be extended in future versions to include additional spectra or raw data, if appropriate. This dataset supports research on compliant buffer layers, electrochemically modified III–V semiconductor surfaces, and optoelectronic heterostructure integration, and may be reused for comparative or methodological purposes. A detailed description of the dataset structure and reuse notes is provided in the accompanying README.md file. Methods Photoluminescence measurements were performed at room temperature to assess the radiative recombination properties and electronic quality of the electrochemically modified InP surface. The PL spectrum included in this dataset represents a processed result selected to be representative of the modified surface state. Spectral acquisition covered the wavelength range corresponding to near-band-edge emission of InP. Data processing involved background subtraction and normalization to remove non-intrinsic contributions and to facilitate reliable interpretation of emission features. The processed spectrum was used to verify the preservation of band-edge radiative recombination and the absence of defect-related luminescence typically associated with deep-level states or surface-induced damage. Detailed excitation conditions, detection parameters, and electrochemical surface modification settings are intentionally omitted and may be disclosed in future dataset versions upon completion of the full experimental study. Content of the dataset The dataset includes: One processed photoluminescence spectrum of an electrochemically modified InP surface; A table of extracted spectral parameters (emission peak position and spectral width); A sample identification table describing the material and surface state. All tabulated data are provided in open formats to facilitate reuse.