The data of the article “A Study on the Effects of Pressure and Rotation Speed on the Growth Rate and Uniformity of SiC in a Vertical Hot-Wall CVD Epitaxial System”
收藏DataCite Commons2026-03-20 更新2026-05-05 收录
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资源简介：
This dataset is a numerical simulation data that supports the conclusions and charts of the paper "The Influence of Pressure and Speed on the Growth Rate and Uniformity of Vertical Hot Wall CVD Epitaxial SiC". It includes core data such as SiC epitaxial growth rate, thickness uniformity, reactant molar concentration, and flow field temperature distribution under different reaction chamber pressures (50-450 mbar) and substrate speeds (0-1000 rpm).
提供机构：
Science Data Bank
创建时间：
2026-03-20
