Estimated afterpulsing probabilities (in percent) and their standard deviation for each SPADs of the two arrays. The top row indicates the pixel number in each array. The standard deviation is based o

Figshare2017-04-19 更新40

Thin Al1-xGaxAs0.56Sb0.44 diodes with extremely weak temperature dependence of avalanche breakdown

雪崩光电二极管性能

半导体器件温度稳定性

When using avalanche photodiodes (APDs) in applications, temperature dependence of avalanche breakdown voltage is one of the performance parameters to be considered. Hence, novel materials developed f

NIAID Data Ecosystem40

Thin Al1-xGaxAs0.56Sb0.44 diodes with extremely weak temperature dependence of avalanche breakdown

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雪崩光电二极管性能

DataONE2020-06-24 更新50

Improved planar InAs avalanche photodiodes with reduced dark current and increased responsivity

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雪崩光电二极管性能

Indium Arsenide (InAs) infrared photodiodes provide high quantum efficiency in the wavelength range of 1.0 to 3.0 µm. Planar diode configuration has been adopted to reduce surface leakage. In this wor

DataCite Commons2020-08-28 更新40

III-V based APDs performance

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