Research data supporting publication: "Recombination efficiency in c-plane (In,Ga)N/GaN quantum wells: Saturation of localisation sites versus Auger-Meitner recombination"
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Data supporting the paper published in J. Phys. D: Appl. Phys entitled "Recombination efficiency in c-plane (In,Ga)N/GaN quantum wells: Saturation of localisation sites versus Auger-Meitner recombination"
创建时间：
2024-10-11
