Piezoelectric and thermal strain in AlGaN/GaN-based HEMTs in operation
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https://b2find.eudat.eu/dataset/ddf9e052-12b5-560f-b983-49367d6dd2b7
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We propose to acquire operando scanning X-ray diffraction microscopy (SXDM) maps on Al(Ga)N/GaN-based HEMT devices in operation mode. The study aims to probe the lattice...



