beta-Ga2O3/Si, experimental Data
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The broad range of potential applications for gallium oxide as an advanced material in the semiconductor industry necessitates further research into cost-effective thin-film growth methods, particularly on non-native substrates. In this study β-Ga₂O₃ films were deposited onto a silicon substrate using RF magnetron sputtering. Raman spectroscopy and X-ray diffraction (XRD) analyses confirmed the high crystalline quality of the synthesized gallium oxide films. The mechanical stresses in the β-Ga₂O₃/Si heterostructure were experimentally determined using X-ray diffraction
创建时间：
2025-04-22
