RF Measurements Dataset for Memristor Switches Based on MoS2 up to 110GHz

This dataset contains the RF characterization of eight memristors operating in Low Resistance State (LRS) and High Resistance State (HRS). These devices were designed, fabricated, and characterized to operate as reconfigurable switching mechanisms for Reconfigurable Intelligent Surfaces (RISs). The provided data mainly consists of S-parameter measurements conducted at room temperature across two frequency bands: 10–43.5 GHz and 67–110 GHz. For the low band, the experimental setup consisted of a Keysight N5224B PNA network analyzer connected to a probe station equipped with GSG probes (100 µm pitch). For the high band, a frequency-extender configuration was added to the experimental setup. All S-parameter data has been pre-processed to de-embed the effects of the test fixture using the Thru-Reflect-Line (TRL) de-embedding technique. Data Structure: The files are provided in standard Touchstone format (.s2p). Each file represents the S-parameter measurements for a single device in a specific state, either LRS or HRS, across one frequency band. Files follow the naming convention: DeviceNumber_State_Band.s2p (e.g., D12_LRS_43GHz.s2p or D35_HRS_110GHz.s2p).