Operando X-ray absorption spectroscopy characterization to understand the switching mechanisms in La1-xSrxMnO3+d memristors in top-top confi

Manganite-based devices show very promising multilevel resistive switching (RS) making them ideal candidates for alternative non-volatile memories and building blocks for neuromorphic computation. In contrast to the more common filamentary switching, manganite devices can switch homogeneously over the whole device and might be superior with respect to their cell-to-cell and cycle-to-cycle variability. However, it is still unclear which are the nanoscale interface mechanisms governing RS. Performing operando X-ray absorption spectroscopy (XAS) will enable us to gain insights into the chemical and structural changes taking place. The main objectives of this proposal are to: 1) experimentally measure the structural and chemical changes related to RS with time-resolved resolution (scale of seconds) by operando electrical measurements; and 2) obtain spatially resolved XAS maps below and between the electrodes with micrometric resolution before, during and after the change in resistance.