Multimodal imaging of strain and light emission of InGaN/GaN layers grown on 2D h-BN.

Hexagonal boron nitride is an emerging 2D optoelectronic material and is beginning to play a significant role in prototypes of next-generation optoelectronic and electronic devices. Because it is produced in industry-standard reactors during the same epitaxy run as GaN-based active devices, h-BN has a path to mass commercialization. It can be used as a release layer that permits simplified lift-off and transfer of III-N optoelectronic devices to arbitrary support, allowing more flexible use and improving thermal performance. We propose to use µLaue and XEOL to scan with high precision the orientation, defects, and lattice strains of InGaN/GaN LED MQW grown on h-BN with a small thickness epitaxial layer, and to study the transfer of this layer. The usual LED structure grown on sapphire will provide a reference for analysis. This work is in the framework of the new PEPR DIADEM project called REBORN, coordinated by the GT-CNRS IRL with CNRS, SOLEIL, CEA, and GeorgiaTech Atlanta.