Complex refractive index determined during MOVPE epitaxial growth at different stages of GaN valence growth at 1045 C

The data describe the combined refractive index (n+ik) of the GaN layer measured at 1045 C during the MOVPE epitaxial growth process. The measurements were performed inside an AIXTRON 3x2'' CCS epitaxial reactor using reflectance spectrum measurements at different stages of the process. The resulting reflection spectra were simulated to determine the basic parameters of the thin film GaN, including the combined refractive index. V. software was used for this purpose. A. S. E (J. A. Wollam) using a parametric oscillator (PSEMI, PSEMI-0 and PSEMI-TRI and a Gaussian oscillator). The file described ‘GaN_1045_C_Start_process.txt’ is the measurement taken after the formation of the nucleation layer (see figure) and about 110 nm (total of about 150 nm GaN layer). The file ‘GaN_1045_C_End_of_the_process.txt’ describes the refractive index just after completion of the epitaxy process but still at 1045 C, the thickness of the layer is about 1400 nm. The file ‘GaN_30_C_after_process.txt’ presents the combined refractive index at 30 C. The measurement was carried out in the same way as for the previous measurements.