Resistive Drift of Titanium Dioxide Memristor Devices

Dataset DescriptionA dataset containing data collected from measuring the drift characteristics titanium dioxide memristors, for a variety of initial states, under zero-bias conditions.The devices used were TiO2 devices, with Al2O3 interstitials - the same device type as used in [1], which introduced the memristor.Data CollectionDevices were electroformed using a series of steadily increasing voltage pulses, ranging in magnitude from 3V to 10V with a step of 0.5V. The electroforming pulse widths ranged from 10µs to 100µs.Following electroforming, devices were randomly programmed to an initial resistance value less than 100kΩ.30ms, 0.3V read pulses were used to measure the device state every 10 seconds using Kelvin sensing following an initial programming step for each resistive drift series.Following data collection, a small number of series were excluded where devices were deemed to have been incorrectly electroformed, or to have failed, due to displaying highly atypical drift characteristics. As a further post-processing step, anomalous read values within series, identified as being those exceeding 100kΩ, were adjusted in order to denoise the data.References[1] Strukov, D., Snider, G., Stewart, D. et al. The missing memristor found. Nature 453, 80–83 (2008).