Ge-Sb Thin Films Patterned by Heat-Mode Lithography
收藏科学数据银行2024-05-15 更新2026-04-23 收录
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资源简介：
A binary Te-free phase-change material Ge9.15Sb90.85 (GS) is investigated as the heat-mode resist. A high etching selectivity ratio can be achieved by matching a suitable developer. A reasonable explanation for the positive development is proposed based on the chemical binding energy analysis. High-resolution relief patterns are fabricated on the GS films by laser direct writing and wet etching. It reveals that GS is a promising heat-mode resist for the fabrication of photonic devices.
提供机构：
郑金轮; 王阳; 赵培均; 魏劲松; 张奎
创建时间：
2024-05-15
