Chemical composition of tellurium oxides thin films deposited by magnetron sputtering method

Thin films were prepared by radio frequency reactive magnetron sputtering technique. Metallic Te target was sputtered for about 45 min in argon-oxygen atmosphere what resulted in 300 nm film thickness deposition. The pressure in the chamber was below 0.2 Pa and substrate was heated at 200 °C. The distance between sputtered target and the Corning 1737 glass substrate was about 10 cm. Chemical composition of prepared samples was analyzed by X-ray photoemission spectroscopy method (XPS). The XPS measurement was performed at room temperature under ultra-high vacuum conditions, at pressures below 1.1 × 10−6 Pa by Omicron NanoScience equipment. Data analysis was performed with the CASA XPS software package using a Shirley background subtraction and least-square GaussianLorentzian – GL(30) curve fitting algorithm. The spectra obtained were calibrated to give a binding energy of 285.00 eV for C 1s. In this data set results of XPS investigations of thin films deposired under variuos Ar-O ratio are presented.