Study of the deformation potential in InGaN nanostructures on porous GaN

Our aim in this project is to experimentally determine the deformation potential of the InxGa1-xN alloy (“InGaN”). Until now this task has been elusive due to the convoluted nature of luminescence from InGaN heterostructures. Our approach is to allow for elastic relaxation of InGaN by forming InGaN nanostructures on nanoporous GaN. Making use of wide InGaN quantum wells (QWs) on these compliant pseudo-substrates leads to the absence of quantum confined Stark effect (QCSE)1 compositional pulling effect2. We will use the ESRF light source to map the strain distribution in InGaN nanostructures and correlate it with the observed shifts of the luminescence. This way, we will determine the influence of the deformation potential.