SiC MOSFET短路和雪崩特性

MSOFET器件在雪崩、短路等极端条件下会面临由于瞬态局部电热集中所导致退化和失效等可靠性问题，本部分以两款商用1200V SiCMOSFET器件为对象，进行了单脉冲短路和单脉冲雪崩测试，从较低的短路、雪崩应力开始，逐步增加器件的短路时间和雪崩能量，直至器件损坏，主要记录了SiC MOSFET器件短路、雪崩波形，以及在逐渐增加短路应力过程中器件的栅氧层漏电流、栅氧层C-V曲线以及转移特性变化情况。基于TCAD Sentaurus器件仿真软件，对SiC VDMOSFET器件的短路和雪崩特性进行了仿真，得到了其雪崩、短路仿真波形以及在短路雪崩过程中器件内部电热参数分布情况。最后，基于Matlab和Pspice软件，建立了SiC MOSFET器件电热偶合模型，该模型仿真结果与器件实际短路电流波形可以很好吻合。

SiC MOSFET devices face reliability issues including degradation and failure caused by transient local electro-thermal concentration under extreme conditions such as avalanche and short-circuit. This section takes two commercial 1200V SiC MOSFET devices as the research subjects, conducting single-pulse short-circuit and single-pulse avalanche tests. Starting from relatively low short-circuit and avalanche stress levels, the short-circuit duration and avalanche energy of the devices are gradually increased until the devices are damaged. The primarily recorded data include the short-circuit and avalanche waveforms of the SiC MOSFET devices, as well as the variations in gate oxide leakage current, gate oxide C-V curves, and transfer characteristics of the devices during the gradual increase of short-circuit stresses. Based on the TCAD Sentaurus device simulation software, the short-circuit and avalanche characteristics of SiC VDMOSFET devices are simulated, and the avalanche and short-circuit simulation waveforms as well as the internal electro-thermal parameter distribution of the devices during the short-circuit and avalanche processes are obtained. Finally, an electro-thermal coupling model of SiC MOSFET devices is established based on Matlab and Pspice software, and the simulation results of this model are in good agreement with the actual short-circuit current waveforms of the devices.

搜集汇总

背景与挑战

背景概述

该数据集主要研究商用1200V SiC MOSFET器件在短路和雪崩条件下的电热特性，包括实验测试、仿真分析和建模工作，数据量为390.82MB，包含315个文件。