Impact of Temperature on Single-Event Effects in GaN HEMTs
收藏DataCite Commons2025-04-27 更新2025-04-16 收录
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资源简介：
Experimental investigations on AlGaN/GaN HEMT devices were conducted at 238 K, 298 K, 323 K, and 413 K using the femtosecond pulsed laser single-event effects test facility at the National Space Science Center (NSSC), Chinese Academy of Sciences (CAS).
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Science Data Bank
创建时间：
2025-03-26
