Outlook on key technologies for high overcurrent capability power electronic devices

With the rapid growth of grid integration requirements for renewable energy, power semiconductor devices face stringent demands for withstanding multiple times their rated current. However, there exists a significant gap between the overcurrent capability of existing silicon-based and silicon carbide-based devices and the requirements of power systems. To support the strategic development needs of “dual-high” power systems, the overcurrent capability of power devices urgently needs breakthroughs across various technical limits. This involves constructing a multi-dimensional technology matrix—from chip design to packaging and thermal management—ultimately achieving a leapfrog improvement in the overcurrent capability of power electronic devices. This paper outlines the key technologies required for the development of high-overcurrent-capability power electronic devices from three dimensions: chip design, packaging technology, and thermal management. At the chip level, advanced designs and processes such as multi-dimensional minority carrier injection, carrier lifetime control, superjunction structures, and plasma diffusion layer design are summarized. In terms of packaging technology, the applications of low thermal resistance, low-inductance planar interconnects, three-dimensional integration technologies, as well as interconnect processes like nanoparticle sintering and transient liquid-phase sintering in enhancing the overcurrent capability of power electronic devices are reviewed. Regarding thermal management technologies, the effectiveness of methods such as phase-change materials, heat pipes, microchannel liquid cooling, and dynamic current limiting in improving the overcurrent capability of devices is discussed from the perspectives of passive and active overcurrent control schemes.