Total Ionizing Dose Impact on 22-nm FD-SOI Ring Oscillator Current and Frequency
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http://dataverse.jpl.nasa.gov/citation?persistentId=doi:10.48577/jpl.BSQUUU
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资源简介：
Total ionizing dose (TID) has a significant effect on silicon on insulator (SOI) circuits, manifest primarily as a front gate threshold voltage (Vt) shift. This paper presents data on ring oscillator (RO) responses of 22 nm fully depleted (FD-SOI) thin oxide (core logic) devices to gamma-ray doses above 1 Mrad(Si). We show significant current and frequency TID response differences between ROs comprised of different logic gates. Moreover, these responses vary with Vt and well type. The TID impact on digital circuit timing margins is discussed.
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Root
创建时间：
2023-03-08
