Accelerated aging and junction temperature extraction experimental data of SiC MOSFET
收藏IEEE2026-04-17 收录
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https://ieee-dataport.org/documents/accelerated-aging-and-junction-temperature-extraction-experimental-data-sic-mosfet
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资源简介：
In order to obtain the temperature sensitive electrical parameters VDS and junction temperature parameters from the non aging module of SiC MOSFET to the aging failure stage, the saturation voltage drop test was conducted on the SiC MOSFET module with the model of BSM300D12P2E001 (1200V/300A), and the junction temperature extraction test was conducted on the non aging module and the SiC MOSFET module after DC power cycle accelerated aging test.
提供机构：
Meng, Zhaoliang; Shi, Feifan
