Supplementary Materials: Evidence of the non-radiative character of dislocations in V-pit-free InGaN/GaN quantum wells
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A. UNDERLAYER EFFECTIVE THICKNESS B. LOW INDIUM CONTENT UNDERLAYER C. FS GAN SERIES D. SCANNING TRANSMISSION ELECTRON MICROSCOPY E. TIME-RESOLVED PHOTOLUMINESCENCE F. DIFFUSION LENGTH G. QW ENERGY PEAK IN CL MAPS
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AIP Publishing创建时间：
2026-01-26
