Operando X-ray absorption spectroscopy to understand the switching mechanisms in Pt/La2NiO4/TiN memristors for neuromorphic computing

Rising interest for beyond von-Neumann logics has led to the development of artificial synapses for neuromorphic computation using memristors as functional elements. Due to their adjustable resistance, the modulated synaptic weight of bio-synapse can be performed, making them suitable for learning and memory functions. In the last few years, special attention has been drawn to the use of perovskites (such as manganites or nickelates) as memristive layer due to their tunable ionic and electronic transport properties.In this context the main objectives of this proposal are to: 1) experimentally measure chemical changes related to the resistive switching (RS) behaviour of Pt/La2NiO4+δ/TiN memristors with different oxygen content and thickness, and 2) temporarily observe the chemical changes in each of the layers related to cycling, potentiation, depression and relaxation functions by operando XANES /electrical measurements.