Engineering Titanium Dioxide/Titanocene-Polysulfide Interface for Flexible, Optical-Modulated, and Thermal-Tolerant Multilevel Memristor

Multifunctional
memristors with a high memory density, low power
consumption, flexibility, programmability, and environmental robustness
are essential for next-generation memories. In this work, a titanocene-polysulfide
complex (Cp2TiS5) with strong S···S
interactions and hydrogen bonds was synthesized and integrated with
TiO2 to create a novel Cu/TiO2/Cp2TiS5/Ag memristor. This device shows bipolar nonvolatile
memory performance with a remarkable ON/OFF ratio (104.8), low switching voltages (VSET, −0.16
V; VRESET, +0.15 V), and low power consumption
(2.7 × 10–4 μW). It exhibits multilevel
memory behavior, flexibility, optical modulation (VSET decreases from −1.35 to −0.17 V with
decreasing irradiation wavelength), and thermal tolerance (up to 200
°C). The electron-rich Cp2TiS5 layer protects
the Ag-CFs, while TiO2’s oxygen vacancies and unsaturated
Ti atoms interact with sulfur from Cp2TiS5,
lowering the Schottky barrier and facilitating charge transport. This
work offers promising opportunities in flexible memristive devices
for neuromorphic computing under extreme conditions.