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Nansosheet device characteristics
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创建时间：
2022-08-10
相关数据集
Molecular Switching by Proton-Coupled Electron Transport Drives Giant Negative Differential Resistance
We report such a molecular switch based on proton-coupled electron transfer (PCET) reaction with giant hysteric negative differential resistance (NDR) with peak-to-valley ratios of 120 ± 6.6 and memor
DataCite Commons2024-09-03 更新120
Data for Cryogenic Multiplexing with Bottom-Up Nanowires. Supplementary information figures
Datasets used in the figures of the Supplementary Information of the publication "Cryogenic Multiplexing with Bottom-Up Nanowires"The datasets contain supporting information including transfer curves
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Dark I-V data of CZTS/CdS/ZnO diode device
The determination of some properties of the CZTS based heterojunctions with simple and low-cost method such as I-V output characterization instead of expensive and complex analysis processes is highly
Mendeley Data2020-04-26 更新20
Molecular Switching by Proton-Coupled Electron Transport Drives Giant Negative Differential Resistance
We report such a molecular switch based on proton-coupled electron transfer (PCET) reaction with giant hysteric negative differential resistance (NDR) with peak-to-valley ratios of 120 ± 6.6 and memor
DataCite Commons2024-09-02 更新100
Electrical characterization of multi-gated WSe2/MoS2 van der Waals heterojunctions
Transistor measurements
DataCite Commons2024-08-12 更新40
